Synthesis of β-Si3N4 by Chemical Vapor Deposition |
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| Authors: | TOSHIO HIRAI SHINSUKE HAYASHI |
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| Affiliation: | Research Institute for Iron, Steel, and Other Metals, Tohoku University, Katahira, Sendai 980, Japan |
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| Abstract: | Beta-type CVD-Si3N4 plates (up to 1.1 mm thick) have been prepared by adding TiCl4 vapor to the system SiCl4-NH3-H2 at deposition temperatures of 1350° to 1450°C, while α-type or amorphous CVD-Si3N4 was obtained without TiCl4 vapor at the same deposition temperature. Three to four wt % 777V was included in the β-type CVD-Si3N4 matrix. The density, preferred orientation, and lattice parameters of β-type CVD-Si3N4 were examined. |
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