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| 热丝化学气相沉积制备多晶硅薄膜的研究 | |
| 引用本文： | 刘韶华,刘艳红,吕博佳,温小琼. 热丝化学气相沉积制备多晶硅薄膜的研究[J]. 电子元件与材料, 2006, 25(5): 23-26 |
| 作者姓名： | 刘韶华 刘艳红 吕博佳 温小琼 |
| 作者单位： | 大连理工大学三束材料改性国家重点实验室,辽宁,大连,116024;大连理工大学三束材料改性国家重点实验室,辽宁,大连,116024;大连理工大学三束材料改性国家重点实验室,辽宁,大连,116024;大连理工大学三束材料改性国家重点实验室,辽宁,大连,116024 |
| 基金项目： | 辽宁省优秀青年教师培养基金 |
| 摘 要： | 采用热丝化学气相沉积技术制备了多晶硅薄膜。利用Raman、XRD、SEM等检测手段,系统研究了沉积气压、衬底温度、衬底与热丝间距离、衬底种类等实验参数对多晶硅薄膜晶态比、晶面择优取向、晶粒尺寸的影响。得出优化条件:沉积气压42 Pa,衬底温度250℃,衬底与热丝间距离48 mm,在玻璃衬底上制备出晶态比Xc>90%,择优取向为(111),横向晶粒尺寸为200~500 nm,纵向晶粒尺寸为30 nm左右的优质多晶硅薄膜。 |
| 关 键 词： | 无机非金属材料 热丝化学气相沉积 多晶硅薄膜 晶态比 择优取向 |
| 文章编号： | 1001-2028（2006）05-0023-04 |
| 收稿时间： | 2006-01-22 |
| 修稿时间： | 2006-01-22 |
Deposition and Characteristics of Poly-silicon Films by Hot-wire CVD |
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| LIU Shao-hua,LIU Yan-hong,LU Bo-jia,WEN Xiao-qiong. Deposition and Characteristics of Poly-silicon Films by Hot-wire CVD[J]. Electronic Components & Materials, 2006, 25(5): 23-26 | |
| Authors: | LIU Shao-hua LIU Yan-hong LU Bo-jia WEN Xiao-qiong |
| Affiliation: | State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China |
| Abstract: | Poly-Si films were deposited by hot-wire chemical vapor deposition,and film structural and morphological properties were characterized by Raman,XRD,and SEM.The effect of parameters,including gas pressure,substrate temperature,space between hot-wore and substrates,and the different kinds of substrates,on poly-Si structure were studied systematically.The results show that the high-quality poly-Si,with particles of 30 nm transverse size and 200~500 nm longitudinal size,90% crystalline ratio,and preferred orientation of(111),can be deposited on glass substrate at the optimal parameters,42 Pa of gas pressure,250℃ of substrate temperature,and 48 mm space between hot-wire and substrates. |
| Keywords: | inorganic non-metallic materials hot-wire CVD poly-Si films crystalline ratio preferred orientation |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |