Photoconductivity of nanostructured hydrogenated silicon films |
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| Authors: | O. A. Golikova |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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| Abstract: | ![]()
The photoconductivity of nanostructured hydrogenated silicon films prepared by different techniques was studied in relation to the Fermi level position, the density of defects, and the type of Si-H bonding. The influence of Si+ ion implantation on the photoconductivity and other parameters of a-Si:H films was determined. |
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