Ag and O ion irradiation induced improvement in dielectric properties of the Ba(Co1/3Nb2/3)O3 thin films |
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| Authors: | Bhagwati Bishnoi PK Mehta CJ Panchal MS Desai Ravi Kumar V Ganesan |
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| Affiliation: | 1. Department of Physics, Faculty of Science, The M.S. University of Baroda, Vadodara 390002, Gujarat, India;2. Applied Physics Department, Faculty of Technology & Engineering, The M.S. University of Baroda, Vadodara 390001, Gujarat, India;3. Material Science Division, National Institute of Technology, Hamirpur 177005, Himachal Pradesh, India;4. UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore 452017, Madhya Pradesh India |
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| Abstract: | We present the preliminary results of temperature and frequency dependent dielectric measurements on Ba(Co1/3Nb2/3)O3 (BCN) thin films. These films were prepared on indium tin oxide (ITO) coated glass substrates by the pulse laser deposition (PLD) technique. It exhibits single-phase hexagonal symmetry. These films were irradiated with Ag15+ (200 MeV) and O7+ (100 MeV) beams at the fluence 1 × 1011, 1 × 1012, and 1 × 1013 ions/cm2. On irradiating these films, its dielectric constant (?′) and dielectric loss (tan δ) parameters improve compared to un-irradiated film. Compared to O7+ irradiation induced point/cluster defects Ag15+ induced columnar defects are more effective in reducing/pinning trapped charges within grains. The present paper highlights the role of swift heavy ion irradiation in engineering the dielectric properties of conductive samples to enable them to be useful for microwave device applications. |
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| Keywords: | Thin films Irradiation effects Atomic force microscopy (AFM) Dielectric properties |
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