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Growth studies and characterization of In2S3 films prepared by hydrothermal method and their conversion to In2O3 films
Authors:Lina Zhang  Wei Zhang  Haibin Yang  Wuyou Fu  Wenyan Zhao  Hui Zhao  Jinwen Ma
Affiliation:1. State Key Laboratory of Superhard Materials, Jilin University, 2699 Qianjin Street, Changchun 130012, PR China;2. Department of Materials Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, PR China
Abstract:
For the first time, In2S3 films composed of nano-/microflakes were fabricated on fluorine-doped tin oxide (FTO) substrate using a simple and effective hydrothermal method. The structure, composition and morphology were examined by X-ray diffraction, energy-dispersive X-ray spectroscopy and field emission scanning electron microscopy. It was found that the reaction time, reaction temperature and the molar ratio of the reactants play key roles in controlling the final morphologies. The possible growth mechanism for the formation of In2S3 thin films was proposed. And the optical and photoelectrochemical properties were also investigated. In addition, In2O3 films were obtained by annealing the In2S3 precursor films in air at 500 °C.
Keywords:Semiconductors   Thin films   Annealing   Nucleation
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