A 3.1-4.8 GHz transmitter with a high frequency divider in 0.18μm CMOS for OFDM-UWB |
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引用本文: | 郑仁亮,任俊彦,李巍,李宁.A 3.1-4.8 GHz transmitter with a high frequency divider in 0.18μm CMOS for OFDM-UWB[J].半导体学报,2009,30(12):69-76. |
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作者姓名: | 郑仁亮 任俊彦 李巍 李宁 |
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基金项目: | Project supported by the National Eleven-Five Project Funding (No. 51308020403), the Science and Technology Commission of Shanghai Municipality (No. 08706200700), and the National High Technology Research and Development Program of China (No. 2009AA01Z261 ). |
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摘 要: | A fully integrated low power RF transmitter for a WiMedia 3.1-4.8 GHz multiband orthogonal frequency division multiplexing ultra-wideband system is presented. With a separate transconductance stage, the quadrature up-conversion modulator achieves high linearity with low supply voltage. The co-design of different resonant frequencies of the modulator and the differential to single (D2S) converter ensures in-band gain flatness. By means of a series inductor peaking technique, the D2S converter obtains 9 dB more gain without extra power consumption. A divided-by-2 divider is used for carrier signal generation. The measurement results show an output power between -10.7 and -3.1 dBm with 7.6 dB control range, an OIP3 up to 12 dBm, a sideband rejection of 35 dBc and a carrier rejection of 30 dBc. The ESD protected chip is fabricated in the Jazz 0.18μm RF CMOS process with an area of 1.74 mm^2 and only consumes 32 mA current (at 1.8 V) including the test associated parts.
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关 键 词: | OFDM技术 CMOS工艺 超宽带系统 发射频率 微米 正交频分复用 分频 低电源电压 |
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