Method of simulation of low dose rate for total dose effect in 0.18 μm CMOS technology |
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引用本文: | 何宝平,姚志斌,郭红霞,罗尹虹,张凤祁,王圆明,张科营.Method of simulation of low dose rate for total dose effect in 0.18 μm CMOS technology[J].半导体学报,2009(7):76-79. |
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作者姓名: | 何宝平 姚志斌 郭红霞 罗尹虹 张凤祁 王圆明 张科营 |
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摘 要: | Three methods for simulating low dose rate irradiation are presented and experimentally verified by using 0.18 μm CMOS transistors.The results show that it is the best way to use a series of high dose rate irradiations, with 100 °C annealing steps in-between irradiation steps, to simulate a continuous low dose rate irradiation.This approach can reduce the low dose rate testing time by as much as a factor of 45 with respect to the actual 0.5 rad(Si)/s dose rate irradiation.The procedure also provides detailed information on the behavior of the test devices in a low dose rate environment.
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关 键 词: | CMOS技术 低剂量率 总剂量效应 模拟 测试装置 时间信息 照射 s方法 |
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