| Abstract: | A model of light-induced defect growth in a-Si-:H p-i-e cells is presented, based on the recombination of photo-generated carriers. Adopting a variable minority-carrier transport scheme, the defect growth exhibits a strong dependence on the electric field across the cell. at very low fields the kinetic equation is non-linear, leading to a power-law time dependence. At very high fields it becomes linear, giving rise to a simple exponential behavior. Intermediate regimes can be well approximated by “stretched exponential” formulas, although the kinetic equation is non-dispersive. |
