Admittance—Frequency Response in Zinc Oxide Varistor Ceramics

The lumped parameter/complex plane analysis technique revealed several contributions to the terminal admittance of the ZnO—Bi₂O₃ based varistor grain-boundary ac response. The terminal capacitance has been elucidated via the multiple trapping phenomena, a barrier layer polarization, and a resonance effect in the frequency range 10^?2≤ f ≤ 10⁹ Hz. The characterization of the trapping relaxation behavior near ～ 10⁵ Hz (～ 10^?6 s) provided a better understanding of a previously reported loss-peak. The possible nonuniformity in this trapping activity associated with its conductance term observed via the depression angle of a semicircular relaxation in the complex capacitance ( C *) plane has been postulated.