| Si(100)—As表面钝化作用和氧吸附 |
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| 引用本文： | 钟战天,王大文,范越,李承芳.Si(100)—As表面钝化作用和氧吸附[J].半导体学报,1990,11(2):104-110. |
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| 作者姓名： | 钟战天 王大文 范越 李承芳 |
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| 作者单位： | 中国科学院半导体研究所和国家表面物理实验室
(钟战天，范越)，清华大学无线电电子学系
(王大文)，中国科学院半导体研究所和国家表面物理实验室(李承芳) |
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| 摘 要： | 利用自己研制的具有分子束外延系统的表面分析联合谱仪研究了氧与Si(100)—As表面的相互作用。本文进一步证实了As层是Si表面的很好的钝化层,并首次研究了Si(100)—As表面的氧吸附全过程。实验表明,氧的饱和覆盖量为0.5单原子层,即Si表面上存在As原子层而使吸附位置减少一半。另外,通过吸附动力学分析得知,Si(100)—As表面的初始粘附系数是5.6×10~(-3),比清洁的Si(100)表面小一个数量级。Si表面上As的钝化作用是Si原子的悬挂键态被As原子的占有孤立对态代替而形成。
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| 关 键 词： | Si(100)-As表面 钝化效应 氧吸附 粘附系数 |
Passivation Effect and Oxygen Adsorption of Si(100)-As Surface |
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| ZHONG Zhantian/Institute of Semiconductors and Lab. for Surface Physics,Academia Sinica,Beijing,ChinaWANG Dawen/Institute of Semiconductors and Lab. for Surface Physics,Academia Sinica,Beijing,ChinaFAN Yue/Institute of Semiconductors and Lab. for Surface Physics,Academia Sinica,Beijing,ChinaLI Chengfang/Institute of Semiconductors and Lab. for Surface Physics,Academia Sinica,Beijing,China.Passivation Effect and Oxygen Adsorption of Si(100)-As Surface[J].Chinese Journal of Semiconductors,1990,11(2):104-110. |
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| Authors: | ZHONG Zhantian/Institute of Semiconductors and Lab for Surface Physics Academia Sinica Beijing ChinaWANG Dawen/Institute of Semiconductors and Lab for Surface Physics Academia Sinica Beijing ChinaFAN Yue/Institute of Semiconductors and Lab for Surface Physics Academia Sinica Beijing ChinaLI Chengfang/Institute of Semiconductors and Lab for Surface Physics Academia Sinica Beijing China |
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| Abstract: | |
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| Keywords: | Si(100)-As surface Passivation effect Oxygen Adsorption Sticking Coefficient |
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