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Anodic Oxidation of Hydrogen-Transferred Silicon-on-Insulator Layers |
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| Authors: | Tyschenko I. E. Popov I. V. Spesivtsev E. V. |
| Affiliation: | 1.Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia ; |
| Abstract: | Semiconductors - The anodic oxidation rate of silicon-on-insulator films fabricated by hydrogen transfer is studied as a function of the temperature of subsequent annealing. It is established that... |
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