A¨nalysis of floating body effects in thin film conventionaland single pocket SOI MOSFETs using the GIDL current technique |
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| Authors: | Najeev-ud-din Dunga MV Kumar A Vasi J Ramgopal Rao V Baohong Cheng Woo JCS |
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| Affiliation: | Dept. of Electr. Eng., Indian Inst. of Technol. (ITT), Mumbai; |
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| Abstract: | Using a novel gate-induced-drain-leakage (GIDL) current technique and two-dimensional (2-D) simulations, single pocket (SP) SOI MOSFETs have been shown to exhibit reduced floating body effects compared to the homogeneously-doped channel (conventional) SOI MOSFETs. The GIDL current technique has been used to characterize the parasitic bipolar transistor gain for both conventional and SP-SOI MOSFETs. From 2-D device simulations, the lower floating body effects in SP-SOI MOSFETs are analyzed and compared with the conventional MOSFETs |
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