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| 掺W对染料敏化TiO2电极光电性质的研究 | |
| 引用本文： | 杨兵初,伍益,周聪华,熊健,左舜贵. 掺W对染料敏化TiO2电极光电性质的研究[J]. 半导体技术, 2010, 35(7): 676-679. DOI: 10.3969/j.issn.1003-353x.2010.07.016 |
| 作者姓名： | 杨兵初 伍益 周聪华 熊健 左舜贵 |
| 作者单位： | 中南大学,物理科学与技术学院,长沙,410083;中南大学,物理科学与技术学院,长沙,410083;中南大学,物理科学与技术学院,长沙,410083;中南大学,物理科学与技术学院,长沙,410083;中南大学,物理科学与技术学院,长沙,410083 |
| 基金项目： | 湖南省自然科学基金资助项目 |
| 摘 要： | 用双靶直流磁控共溅射方法在FTO透明导电玻璃上沉积掺W的TiO2薄膜.采用原子力显微镜、喇曼光谱仪和透射光谱仪对其表面形貌、晶体结构及光学性能进行了分析.研究发现适量的掺w有利于改善TiO2薄膜的表面结构,并有利于提高染料敏化电池的短路电流;但过量的掺w减弱了锐钛矿相,TiO2薄膜转变为金红石相结构;适量W掺杂TiO2薄膜经敏化组装的太阳能电池,有利于提高其短路电流及光电能量转换效率,不利于提高其开路电压. |
| 关 键 词： | 直流磁控溅射 W/TiO2薄膜 透明电极 光电转换效率 |
Research of W-Doping on Photoelectric Properties of Dye-Sensitized TiO2 Electrodes |
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| Yang Bingchu,Wu Yi,Zhou Conghua,Xiong Jian,Zuo Shungui. Research of W-Doping on Photoelectric Properties of Dye-Sensitized TiO2 Electrodes[J]. Semiconductor Technology, 2010, 35(7): 676-679. DOI: 10.3969/j.issn.1003-353x.2010.07.016 | |
| Authors: | Yang Bingchu Wu Yi Zhou Conghua Xiong Jian Zuo Shungui |
| Affiliation: | Yang Bingchu,Wu Yi,Zhou Conghua,Xiong Jian,Zuo Shungui(School of Physics Science and Technology,Central South University,Changsha 410083,China) |
| Abstract: | W doped TiO2 thin films were fabricated on transparent conductive glass(FTO)by duW-target DC magnetron sputtering deposition.Surface morphology,cyst structure and optical properties of TiO2 films were characterized by atomic force microscope(AFM),Raman spectroscopy and transmission spectra,respectively.It was observed that,when films were fabricated with moderate W-doping,surface morphology and absorption in visible light of the films were improved;pure anatase structure was formed.As W-doping increased,ana... |
| Keywords: | DC magnetron sputtering W/TiO2 film transparent electrode photoelectric conversion efficiency |
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