Characteristics of gold/cadmium sulfide nanowire Schottky diodes |
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| Authors: | Sai Guduru Suresh Rajaputra Shounak Mishra Raghu Mangu Ingrid St. Omer |
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| Affiliation: | Center for Nanoscale Science and Engineering (CeNSE), Department of Electrical and Computer Engineering, University of Kentucky, Lexington, KY 40506, USA |
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| Abstract: | Schottky diode junctions were formed between nanowires of cadmium sulfide and nanowires of gold, through sequential cathodic electrodeposition into the pores of anodized aluminum oxide (AAO) templates. Lengths of CdS and Au nanowires were 100-500 nm and 300-400 nm respectively, while the diameter was 30 nm, each. Analysis of Schottky diodes yielded an effective reverse saturation current (Jo), of 0.32 mA/cm2 and an effective diode ideality factor (A) of 8.1 in the dark. Corresponding values under one sun illumination were, Jo = 0.92 mA/cm2 and A = 10.0. Dominant junction current mechanisms are thought to be tunneling and/or interface state recombination. |
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| Keywords: | Nanowire Schottky diode Anodic aluminum oxide Cadmium sulfide Electro-deposition |
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