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Reverse resistance switching in polycrystalline Nb2O5 films |
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| Authors: | Younghun Jo Hyunsang Hwang Myung-Hwa Jung |
| Affiliation: | a Nano Materials Research Team, Korea Basic Science Insitute, Deajeon 305-333, Republic of Korea b Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea c Department of Physics, New Jersey Institute of Technology, Newark NJ 07102-1982, United States d Department of Physics, Sogang University, Seoul 121-742, Republic of Korea |
| Abstract: | The reverse resistance switching is observed in polycrystalline Nb2O5 film, which is one of promising candidates for nonvolatile resistance random access memory (ReRAM) devices. This reverse switching is compared with the usual behavior, in which the switching voltage VLH from low resistance (LR) to high resistance (HR) states is lower than VHL from HR to LR states. Based on these experiments, we propose a phenomenological mechanism for the resistance switching, which assumes the coexistence of LR and HR phases and the percolation transition. |
| Keywords: | Resistance switching Percolation Magnetic polaron Niobium oxides |
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