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Growth of well-aligned carbon nanotubes by RF-DC plasma chemical vapor deposition |
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| Authors: | Yasuaki Hayashi Takuya Fukumura Teruaki Matsuba |
| Affiliation: | a Department of Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan b R&D Laboratories, Nissin Electric Co., Ltd., 47 Umezu-takase-cho, Ukyo-ku, Kyoto 615-8686, Japan |
| Abstract: | Highly aligned carbon nanotubes (CNTs) were grown under high sheath electric field and gas pressure conditions by the radio frequency (RF) plasma-enhanced direct current (DC) plasma chemical vapor deposition (CVD) method due to a stabilized DC discharge. The uniform growth of highly aligned multi-walled CNTs was achieved over the entire surface area of a 50 × 50 mm2 iron foil. The growth of multi-walled CNTs on a 75 × 75 mm2 iron foil was also confirmed. |
| Keywords: | Carbon nanotubes DC plasma Plasma chemical vapor deposition Sheath Ion bombardment Aligned growth |
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