| AlN外延薄膜的生长和特征 |
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| 引用本文： | 张洁,彭铭曾,朱学亮,颜建锋,郭丽伟,贾海强,陈弘,周均铭.AlN外延薄膜的生长和特征[J].激光与红外,2007,37(13):974-976. |
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| 作者姓名： | 张洁 彭铭曾 朱学亮 颜建锋 郭丽伟 贾海强 陈弘 周均铭 |
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| 作者单位： | 中国科学院物理研究所北京凝聚态物理国家实验室，北京 100080 |
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| 摘 要： | 文章研究了AlN薄膜的晶体质量、表面形貌、应力等性质与AlN生长工艺的依赖关系。通过对低温成核厚度、成核温度和高温生长AlN所用Ⅴ／Ⅲ比的研究，制备出了具有较好晶体质量的AlN薄膜。高分辨三晶X射线衍射给出AlN薄膜的(002)和(105)的半高宽分别为16．9arcsec和615arcsec，接近国际上报道的较好结果。原子力显微镜对表面形貌的分析表明AlN薄膜的粗糙度为5．7nm。拉曼光谱表明E2(high)模向高能方向移动，说明蓝宝石上外延的AlN薄膜处于压应变状态。光学吸收谱在204nm处具有陡峭的带边吸收，也表明了AlN外延薄膜具有较好地晶体质量。
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| 关 键 词： | AlN MOCVD 表面形貌 光学吸收 |
Growth and Characteristics of AlN Epitaxial Films |
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| ZHANG Jie,PENG Ming-zeng,ZHU Xue-liang,YAN Jian-feng,GUO Li wei,JIA Hai qiang,CHEN Hong,ZHOU Jun-ming.Growth and Characteristics of AlN Epitaxial Films[J].Laser & Infrared,2007,37(13):974-976. |
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| Authors: | ZHANG Jie PENG Ming-zeng ZHU Xue-liang YAN Jian-feng GUO Li wei JIA Hai qiang CHEN Hong ZHOU Jun-ming |
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| Affiliation: | Institute of Physics,Beijing National Laboratory for Condensed Matter Physics,Chinese Academy of Sciences, Beijing 100080,China |
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| Abstract: | High quality AlN films were grown on sapphire by metal organic chemical vapor deposition(MOCVD) using low temperature nucleation combined with high temperature growth.By optimizing growth conditions for AlN,a narrow full width at half maximum of 16.9 arcsec and 615 arcsec for the (002) and (105) reflections were obtained, respectively.The properties of AlN was also investigated by atomic force microscopy, Raman scattering spectra and optical transmission spectra.Sharp absorption cutoff wavelength was obtained at 204nm with a band gap energy of 6.07eV. |
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| Keywords: | AlN MOCVD surface morphology optical absorption |
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