The use of magnesium to dope gallium nitride obtained by molecular-beam epitaxy from activated nitrogen

A kinetic model for doping gallium nitride with magnesium in the course of molecular-beam epitaxy from plasma-activated nitrogen is suggested; the model parameters are determined. The theory relies on competitive quasi-equilibrium incorporation of Mg and Ga into the Group III sublattice and accounts for the main observed special features of doping, specifically, the dependence of Mg incorporation on temperature and on the V/III ratio in the incident fluxes.