Temperature-dependent bit-error-rate characterization ofultralow-noise GaAs MESFET's for 3-Gb/s operation |
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| Authors: | Laskar J Feng M Kruse J |
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| Affiliation: | Dept. of Electr. Eng., Hawaii Univ., Honolulu, HI ; |
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| Abstract: | Noise generated in a system establishes the fundamental limitation on the performance of all communication systems and can be characterized with both minimum noise figure (NFmin) and bit error rate (BER). The development of data processing and transmission into the gigabit/second range requires a detailed understanding of the correlation between NFmin and BER. The authors report on the cryogenic microwave measurements of NFmin, current gain cutoff frequency (Ft), and BER at 3 Gb/s of 0.6-μm GaAs MESFETs. The noise characterization of GaAs-based MESFET devices and circuits is significant because GaAs-based MESFETs are clearly the key industry device for both digital and analog applications |
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