| 功率增益截止频率为183GHz的In0.53Ga0.47As/In0.52Al0.48As HEMTs |
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| 引用本文： | 刘亮,张海英,尹军舰,李潇,杨浩,徐静波,宋雨竹,张健,牛洁斌,刘训春.功率增益截止频率为183GHz的In0.53Ga0.47As/In0.52Al0.48As HEMTs[J].半导体学报,2007,28(12). |
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| 作者姓名： | 刘亮 张海英 尹军舰 李潇 杨浩 徐静波 宋雨竹 张健 牛洁斌 刘训春 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 通过合理的外延层材料结构设计和改进的器件制备工艺,制备出功率增益截止频率(fmax)为183GHz的晶格匹配InP基In0.53Ga0.47As-In0.52Al0.48As HEMT.该fmax为国内HEMT器件最高值.还报道了器件的结构、制备工艺以及器件的直流和高频特性.
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| 关 键 词： | 最大振荡频率/功率增益截止频率 高电子迁移率晶体管 InGaAs/InAlAs InP |
In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz |
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| Liu Liang,Zhang Haiying,Yin Junjian,Li Xiao,Yang Hao,Xu Jingbo,Song Yuzhu,Zhang Jian,Niu Jiebin,Liu Xunchun.In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz[J].Chinese Journal of Semiconductors,2007,28(12). |
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| Authors: | Liu Liang Zhang Haiying Yin Junjian Li Xiao Yang Hao Xu Jingbo Song Yuzhu Zhang Jian Niu Jiebin Liu Xunchun |
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| Abstract: | By epitaxial layer structure design and key fabrication process optimization,a lattice-matched InP-based In0.53Ga0.47As-In0.52Al0.48As HEMT with an ultra high maximum oscillation frequency (fmax) of 183GHz was fabricated.The fmax is the highest value for HEMTs in China.Also,the devices are reported,including the device structure,the fabrication process,and the DC and RF performances. |
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| Keywords: | maximum oscillation frequency/power-gain cutoff frequency high electron mobility transistor InGaAs/InAlAs InP |
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