| Abstract: | The influence of DBR in resonant-cavity on the characteristics ofthe reflectivity of InGaAs/GaAs MQW SEED arrays has been discussed. InGaAs/GaAs acting as the active region of MQW SEED to gain 980nm work wavelergth has been introduced. A new resonant-cavity structure of the InGaAs/GaAs MQW SEED arrays has been designed and analyzed. The MQW materials grown by MOCVD system have also been measured and analyzed with micro-optical-spot reflection spectra, PL measurement and X-ray measurement. The results of measurement prove the good quality of the wafer and the accuracy of our design and analysis of the structure of the device. |
