Hot-hole lateral transport in a two-dimensional GaAs/Al0.3Ga0.7As structure

A narrow peak at the leading edge of the current pulse was found in samples of p-GaAs/Al_0.3Ga_0.7As structures subjected to a high electric field. An analysis of the shape and height of the peak as a function of the electric field, as well as the field redistribution along the sample, allows us to conclude that domain instability exists under these conditions. It is also shown that the energy of holes heated in moderate electric fields can significantly exceed the optical phonon energy.