Microstructure of GaN deposited by lateral confined epitaxy on patterned Si (111) |
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Authors: | Feng Wu Shai Zamir Boris Meyler Joseph Salzman Yuval Golan |
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Affiliation: | (1) Department of Materials Engineering, Ben-Gurion University of the Negev, 84105 Beer-Sheva, Israel;(2) Department of Electrical Engineering and Microelectronics Center, Technion-Israel Institute of Technology, 32000 Haifa, Israel |
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Abstract: | Lateral confined epitaxy (LCE) is an epitaxial growth method on substrates patterned to form uniform mesas separated by trenches
for laterally restricting growth area. In this work, plan view and cross-sectional transmission electron microscopy (TEM)
were used in order to characterize the microstructure of GaN films grown by metal-organic chemical vapor deposition on patterned
Si (111) using the LCE method. Two kinds of propagation modes of the dislocations were observed. The dislocations in the center
of the mesa mainly propagate vertically to the surface. On the other hand, dislocations close (1–2 μm) to the mesa edges tend
to bend laterally, allowing dislocation reactions that result in a lower dislocation density. This suggests that the overall
material quality improves with decreasing mesa size, which is consistent with the observed increase in photoluminescence band
edge peak intensity. |
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Keywords: | TEM metalorganic chemical vapor deposition lateral growth threading dislocations V-defects |
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