CMOS兼容近红外Si0.7Ge0.3/Si p-i-n(SOI)光电探测器

报道了一种采用UHV/CVD锗硅工艺和CMOS工艺流程在SOI衬底上制作的横向叉指状Si0.7Ge0.3/Si p-i-n光电探测器.测试结果表明:其工作波长范围为0.7～1.1μm,在峰值响应波长为0.93μm,响应度为0.38A/W.在3.0V的偏压下,其暗电流小于1nA,寄生电容小于1.0pF,上升时间为2.5ns.其良好的光电特性以及与CMOS工艺的兼容性,为研制能有效工作于近红外光的高速、低工作电压硅基光电集成器件提供了一种新的尝试,在高速光信号探测等应用中有一定的价值.

Near-Infrared Si0.7Ge0.3/Si p-i-n Photodetector Fabricated on SOI in CMOS Technology

A novel lateral Si0.7Ge0.3/Si p-I-n photodetector which is suitable for high-speed operation with low-voltage and at 0.7～1.1μm wavelengths is demonstrated.The fabrication of the device is carried out on a SOI substrate by using a UHV/CVD SiGe/Si heteroepitaxy technology and a CMOS/SOI process.Biased at 3.0V,the photodetector attained a responsivity of 0.38A/W at its peak response wavelength 0.93μm and exhibited extremely low dark current of less than 1nA,small parasitic capacitance of less than 1.0pF，and short rise-time of 2.5ns.The distinct characteristics and process compatibility make it applicable to integrate the photodetector with other silicon-based devices to meet the needs of high-speed near-infrared signal detections.