| 内置驱动器的砷化镓高隔离开关芯片 |
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| 引用本文： | 许正荣,应海涛,李娜,李小鹏,张有涛,杨磊.内置驱动器的砷化镓高隔离开关芯片[J].固体电子学研究与进展,2012,32(4):365-369. |
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| 作者姓名： | 许正荣 应海涛 李娜 李小鹏 张有涛 杨磊 |
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| 作者单位： | 1. 南京国博电子有限公司,南京,210016
2. 南京国博电子有限公司,南京,210016;南京电子器件研究所,微波毫米波单片集成和模块电路重点实验室,南京,210016 |
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| 摘 要： | 采用增强/耗尽型(E/D)结构的赝配高电子迁移率晶体管(PHEMT)技术,研制开发的射频开关,具有插损低、隔离度高、承受功率大、线性度高等特点。产品采用0.5μm栅长的砷化镓PHEMT E/D标准工艺加工,将开关电路和驱动电路集成在一颗芯片上,并做了相应的静电防护设计。测试结果表明,在0.01～5.0GHz带内,插入损耗≤1.2dB@3GHz、≤1.6dB@5GHz,带内输入输出驻波比≤1.5,隔离度≥60dB@3GHz、≥52dB@5GHz,1dB压缩功率点达到了30dBm,IP3超过了+52dBm。
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| 关 键 词： | 砷化镓 增强型 耗尽型 射频开关 赝配高电子迁移率晶体管 |
GaAs PHEMT High-isolation Switch Integrated with TTL Driver |
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| XU Zhengrong
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YING Haitao
,
LI Na
,
LI Xiaopeng
,
ZHANG Youtao
,
YANG Lei.GaAs PHEMT High-isolation Switch Integrated with TTL Driver[J].Research & Progress of Solid State Electronics,2012,32(4):365-369. |
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| Authors: | XU Zhengrong YING Haitao LI Na LI Xiaopeng ZHANG Youtao YANG Lei |
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| Affiliation: | 1(1 Nanjing Guobo Electronics Co.,Ltd,Nanjing,210016,CHN)(2 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Dovices Institute,Nanjing,210016,CHN) |
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| Abstract: | GaAs RF switch has been designed using Enhancement/Depletion PHEMT technology.This product has fealures of low loss、high isolation、high power capability、high linearity,which is produced by GaAs 0.5 μm gate-length E/D PHEMT standard process.The switch circuit and TTL driver are integrated into one chip,and an ESD-protection circuit is used to improve its ESD level.The measurement results are as follows: in 0.01～5.0 GHz frequency range, insertion loss≤1.2 dB@3 GHz,≤1.6 dB@5 GHz,VSWR≤1.5,isolation≥60 dB@3 GHz,≥52 dB@5 GHz,P-1≥30 dBm,IP3≥+52 dBm. |
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| Keywords: | GaAs enhancement depletion RF switch PHEMT |
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