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Physically based analytical model for plateau in gate C-V characteristics of strained silicon pMOSFET |
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| Authors: | WANG Bin ZHANG He-ming HU Hui-yong ZHANG Yu-ming ZHOU Chun-yu LI Yu-chen |
| Affiliation: | Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices(School of Microelectronics, Xidian University), Xi'an 710071, China |
| Abstract: | strained-Si/SiGe pMOSFET gate C-V characteristics plateau doping concentration strained-Si layer thickness mass fraction of Ge |
| Keywords: | strained-Si/SiGe pMOSFET gate C-V characteristics plateau doping concentration strained-Si layer thickness mass fraction of Ge |
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