首页 | 本学科首页   官方微博 | 高级检索  
     

阿霉素热化疗诱导A549 细胞凋亡及线粒体跨膜电位的变化
引用本文:张继贤,张启昆,万毅新.阿霉素热化疗诱导A549 细胞凋亡及线粒体跨膜电位的变化[J].金属学报,2004,9(6):662-665.
作者姓名:张继贤  张启昆  万毅新
作者单位:兰州医学院第二附属医院呼吸内科, 兰州730030, 甘肃
摘    要:目的 探讨阿霉素(adrimycin, ADM) 热化疗诱导人肺腺癌A549 细胞凋亡及对线粒体跨膜电位(Δψm) 的影响。 方法 不同浓度的阿霉素作用于体外培养的A549 细胞, 42.5 ℃ 作用30 min 后, 37 ℃继续培养, 在不同时间内检测。用电镜、MTT 法、流式细胞仪检测。 结果 阿霉素热化疗明显增强对A549 细胞的抑制作用, 细胞内阿霉素的浓度显著高于化疗组(P < 0.01);阿霉素浓度为1.0,2.0 mg·L-1时, 热化组与化疗组比较, 凋亡率增高,线粒体膜电位下降(P <0.01)。 结论 线粒体跨膜电位下降可能是ADM 热化疗诱导A549 细胞凋亡的关键。

关 键 词:阿霉素  热化疗  A549  细胞  凋亡  线粒体跨膜电位  
收稿时间:2004-04-08
修稿时间:2004-05-10

Apoptosis induced by thermochemotherapy of adriamycin (ADM) and the change of mitochondial transmembrance potential in A549 cells
ZHANG Ji-Xian,ZHANG Qi-Kun,WAN Yi-Xin.Apoptosis induced by thermochemotherapy of adriamycin (ADM) and the change of mitochondial transmembrance potential in A549 cells[J].Acta Metallurgica Sinica,2004,9(6):662-665.
Authors:ZHANG Ji-Xian  ZHANG Qi-Kun  WAN Yi-Xin
Affiliation:Department of Respiratory Medicine, The Second Affiliated Hospital of Lanzhou Medical College, Lanzhou 730030, Gansu,China
Abstract:AIM: To investigate the effect of apoptosis and the change of mitochondial tansmembrane potential in A549 cells induced by thermochemotherapy of ADM. METHODS: ADM of different concentrations was directly applied to A549 cells cultivated in vitro.Cells maintained at 42.5 ℃for 30min. RESULTS: The inhibition of A549 cells was increased by thermochemotherapy of ADM significantly, and the cytoplasmic concentration of thermochemotherapy of ADM was significantly higher than that of chemotherapy (P <0.01).When it was 1.0 and 2.0 mg·L-1, apoptosis rate was increased and mitochondrial transmembrane potential was decreased by thermochemotherapy of ADM (P <0.01). CONCLUSION: The change of motochondial transmembrane potential was the key of apoptosis induced by thermochemotherapy of ADM in A549 cells.
Keywords:adriamycin  thermochemotherapy  A549 cells  motochondial transmembrane potential  
点击此处可从《金属学报》浏览原始摘要信息
点击此处可从《金属学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号