溅射总压对氧化钒薄膜的结构及电致变色性质的影响

采用高频磁控溅射工艺制备了两种不同性能的V2O5薄膜，并研究了溅射总压对其微观结构、循环伏安特性及电致变色特性的影响。结果表明：当功率一定（3．8W·cm^-2)时，在高气压沉积的V2O5薄膜中出现了微晶相，而在低气压沉积的薄膜中为非晶相。从循环伏安过程中实时记录的透过率变化曲线可见：随着Li^ 离子和电子的双重注入，薄膜在某一波长处的透过率前一阶段是增加或降低，而后一阶段却相反。含微晶相的薄膜上述现象更为明显，而且其储存Li^ 离子的容量也要大许多。应用能带结构理论定性地解释了V2O5薄膜复杂的电致变色现象。

EFFECTS OF TOTAL SPUTTERING PRESSURE ON STRUCTURAL AND ELECTROCHROMICPROPERTIES OF RF MAGNETRON_SPUTTERED VANADIUM OXIDE THIN FILMS

Effects of total sputtering pressure on the microstructures and electrochemical performances of RF magnetron_sputtered V 2O 5 thin films were investigated. The film deposited under higher pressure has a structure with microcrystalline phases embedded in an amorphous matrix, while the film deposited under lower pressure is mainly amorphous. In_situ measured transmission curves during the voltammetric process show that the transmittance of the film at a wavelength decreases or increases with the double insertion of Li + ions and electrons during the first stage, but to the contrary during the later stage. This phenomenon appears more obviously when the film was deposited under a higher pressure and the film will possess a much higher charge storage capacity. With the band structure theory, the electrochromism of V 2O 5 is explained qualitatively.