Plasma-enhanced chemical vapor deposition of polyperinaphthalene thin films |
| |
Authors: | Chi Yu Shiunchin C. Wang Marek Sosnowski Zafar Iqbal |
| |
Affiliation: | 1. Department of Chemistry and Environmental Science, New Jersey Institute of Technology, Newark, NJ 07102, USA;2. Electrical and Computer Engineering Department, New Jersey Institute of Technology, Newark 07102, NJ, USA |
| |
Abstract: | ![]() Plasma-enhanced chemical vapor deposition (PECVD) has been used to grow corrosion-resistive, semiconducting thin films of the graphite-like polymer polyperinaphthalene (PPN) from 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA). Unlike thermal chemical vapor deposition of PPN from PTCDA, where thin film growth is catalyzed by a transition metal substrate, PPN films have been grown by PECVD for the first time on non-catalytic substrates: indium tin oxide (ITO)-coated glass, aluminum and silicon. Films with the same morphology and molecular characteristics have also been grown on steel substrates, where iron functions as a growth catalyst. Potentiodynamic corrosion measurements in pH 5 water show that PPN films on steel provide an effective corrosion protection layer. |
| |
Keywords: | Conducting polymer Thin films Plasma-enhanced chemical vapor deposition Potentiodynamic corrosion measurements |
本文献已被 ScienceDirect 等数据库收录! |
|