| 铝合金CMP技术分析研究 |
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| 引用本文： | 陈景,刘玉岭,王立发,武亚红,马振国.铝合金CMP技术分析研究[J].微纳电子技术,2007,44(11):1017-1020,1025. |
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| 作者姓名： | 陈景 刘玉岭 王立发 武亚红 马振国 |
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| 作者单位： | 河北工业大学,微电子所,天津,300130 |
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| 摘 要： | 阐明了金属化学机械抛光的机理,同时介绍了铝合金化学机械抛光过程中存在的问题,并提出采用碱性抛光液进行实验;分析了抛光液、压力、温度、pH值参数、FA/OⅠ型活性剂对LY12铝合金圆薄片抛光过程的影响。实验表明,pH值在10.1～10.3、温度控制在25～30℃、压力0.06 MPa下有利于铝合金表面完美化。在抛光后期采用单一表面活性剂溶液并且无压力自重条件下抛光,可以获得更为理想的合金表面。
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| 关 键 词： | 铝合金 化学机械抛光 表面粗糙度 表面活性剂 |
| 文章编号： | 1671-4776（2007）11-1017-04 |
| 修稿时间： | 2007-05-18 |
Analysis and Study of CMP Technology of Al Alloy |
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| CHEN Jing,LIU Yu-ling,WANG Li-fa,WU Ya-hong,MA Zhen-guo.Analysis and Study of CMP Technology of Al Alloy[J].Micronanoelectronic Technology,2007,44(11):1017-1020,1025. |
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| Authors: | CHEN Jing LIU Yu-ling WANG Li-fa WU Ya-hong MA Zhen-guo |
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| Affiliation: | Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China |
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| Abstract: | The model of metal CMP was demonstrated.Furthermore,the problems of Al alloy in CMP process were introduced and alkali polishing solution was adopted.The effect of polishing solution,pressure,temperature,pH and FA/OⅠsurfactant on LY12 Al alloy polishing process were analyzed.Based on the experiments,the perfect surface of Al alloy is gained for following conditions: the pH value is 10.1-10.3,the polishing temperature is 25-30 ℃,the pressure is 0.06 MPa.The surface of Al alloy will be better with deadweight in pure surfactant solution at the end of polishing process. |
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| Keywords: | Al alloy chemical mechanical polishing(CMP) surface roughness surfactant |
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