|
|||||
|
|
The evolution of indium precipitation in gallium focused ion beam prepared samples of InGaAs/InAlAs quantum wells under electron beam irradiation |
|
| Authors: | Shuo Liu Jiawei Dong Zhenyu Ma Wenyu Hu Yong Deng Yuechun Shi Xiaoyi Wang Yang Qiu Thomas Walther |
| Affiliation: | 1. College of Electronic and Information, Southwest Minzu University, State Ethnic Affairs Commission, Chengdu, China;2. Pico Center, SUSTech Core Research Facilities, Southern University of Science and Technology, Shenzhen, China;3. College of Electronic and Information, Southwest Minzu University, State Ethnic Affairs Commission, Chengdu, China
Pico Center, SUSTech Core Research Facilities, Southern University of Science and Technology, Shenzhen, China;4. Photon Technology Research Center, Yongjiang Laboratory, Ningbo, China;5. Department Electronic & Electrical Engineering, University of Sheffield, Sheffield, UK |
| Abstract: | Gallium ion (Ga+) beam damage induced indium (In) precipitation in indium gallium arsenide (InGaAs)/indium aluminium arsenide (InAlAs) multiple quantum wells and its corresponding evolution under electron beam irradiation was investigated by valence electron energy loss spectroscopy (VEELS) and high-angle annular dark-field imaging (HAADF) in scanning transmission electron microscopy (STEM). Compared with argon ion milling for sample preparation, the heavier projectiles of Ga+ ions pose a risk to trigger In formation in the form of tiny metallic In clusters. These are shown to be sensitive to electron irradiation and can increase in number and size under the electron beam, deteriorating the structure. Our finding reveals the potential risk of formation of In clusters during focused ion beam (FIB) preparation of InGaAs/InAlAs quantum well samples and their subsequent growth under STEM-HAADF imaging, where initially invisible In clusters of a few atoms can move and swell during electron beam exposure. |
| Keywords: | HAADF In precipitation InGaAs/InAlAs QCL STEM |