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Ballistic nano-devices for high frequency applications |
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| Authors: | S. Bollaert A. Cappy J.S. Galloo Z. Teukam J. Mateos B.G. Vasallo L. Berdnarz |
| Affiliation: | a IEMN-DHS, CNRS UMR 8520, Avenue Poincaré, BP 60069, 59652 Villeneuve d'Ascq, France b Dpto Fisica Aplicad, Universitad de Salamanca, Salamanca, Spain c Université Catholique de Louvain, Louvain-La-Neuve, Belgium |
| Abstract: | In this paper, we present a study on three-terminal ballistic junction and their applications to rectifiers and MUX/DEMUX. Rectifying effect is observed up to 94 GHz at room temperature. Although THz frequency performance has been demonstrated by Monte Carlo simulation, the high impedance of the nano-device combined with the parasitic capacitances is a limiting factor. |
| Keywords: | Ballistic Indium phosphide Nanostructures |
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