GaAs f.e.t.s with silicon-implanted channels |
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Authors: | Kung JK Malbon RM Lee DH |
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Affiliation: | Hughes Aircraft Company, Torrance Research Center, Torrance, USA; |
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Abstract: | Field-effect transistors with channel doping profiles fabricated by the implantation of silicon ions into high-resistivity vapour phase epitaxial GaAs have given noise figures of 2.9 dB with an associated gain of approximately 5 dB at 10 GHz. Similar measurements on F.E.T.S fabricated in an identical manner, except for the channel fabrication, where silicon ions were implanted directly into a Cr-doped semi-insulating GaAs substrate, have resulted in nose figures typically 1 dB higher. |
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