Effects of temperature and pressure in oxynitridation kinetics on Si(100) with N2O gas |
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| Affiliation: | 1. IHP, Im Technologiepark 25, Frankfurt (Oder), 15236 Germany;2. Dipartimento di Scienza dei Materiali, Università Milano-Bicocca, Via Cozzi 55, Milano, I-20125 Italy;3. Dipartimento di Scienze, Università degli Studi Roma Tre, Roma, I-00146 Italy;4. Dipartimento di Fisica ‘E Fermi’, Università di Pisa, largo Pontecorvo 3, Pisa, I56127 Italy;5. BTU Cottbus-Senftenberg, Konrad-Zuse Straße 1, Cottbus, 03046 Germany;6. Technische Universität Berlin, HFT4, Einsteinufer 25, Berlin, 10587 Germany;1. Department of Applied Physics, Fukuoka University, 8-19-1 Nanakuma, Jonan, Fukuoka, 814-0180 Japan;2. Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, 560-8531 Japan;3. Interdisciplinary Graduate School of Engineering Science, Kyushu University, Kasuga, Fukuoka, 816-8580 Japan;4. Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka, 816-8580 Japan;1. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;2. Department of Materials and Synchrotron Radiation Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan;1. Department of Electrical Engineering, National Chi Nan University, Nantou 54561, Taiwan;2. Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;3. National Nano Device Laboratories, Hsinchu 30013, Taiwan;1. Graduate School of Engineering, Tohoku University, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Miyagi, Japan;2. Research Fellow of Japan of Society for the Promotion of Science, Koji-machi Business Center Building, 5-3-1 Koji-machi, Chiyoda-ku, Tokyo 102-0083, Japan;1. Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;2. The Research Fellow of Japan Society for the Promotion of Science, Chiyoda, Tokyo 102-0083, Japan;3. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan |
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| Abstract: | We have investigated oxynitridation of Si(100) surfaces with nitrous oxide (N2O) gas in a wide range of substrate temperatures (600–1000 °C) and N2O pressures (10−2–102 Pa). The growth rate and atomic composition of the oxynitride layer have been measured by in situ x-ray photoelectron spectroscopy. The surface morphology of the oxynitride layer has been also observed by scanning electron microscopy. The results show that in higher N2O pressure (>1 Pa) regime, the nitridation reaction is suppressed by the oxide layer, which quickly forms on the surface. On the other hand, in lower pressure (<1 Pa) and higher substrate temperature (>900 °C) regime, the nitridation reaction strongly occurs because of the active oxidation (etching reaction), which causes the surface roughness. It is found by argon-ion-sputtering measurements that the nitride layer locally exists only near the surface at the reduced N2O pressure. We discuss qualitatively the oxynitridation kinetics and the effective condition for growing the oxynitride layer. |
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| Keywords: | Silicon oxynitride Nitrous oxide Oxynitridation Photoelectron spectroscopy Reaction kinetics Si(100) |
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