| Low Temperature Growth of GaAs on Si byIon Beam Cluster Technique |
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| 作者姓名： | 余怀之 冯德伸 刘建平 |
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| 作者单位： | General Research Institute for Non-ferrous Metals，Beijing 100088，China |
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| 摘 要： | ＬｏｗＴｅｍｐｅｒａｔｕｒｅＧｒｏｗｔｈｏｆＧａＡｓｏｎＳｉｂｙＩｏｎＢｅａｍＣｌｕｓｔｅｒＴｅｃｈｎｉｑｕｅＹｕＨｕａｉｚｈｉ，ＦｅｎｇＤｅｓｈｅｎ，ＬｉｕＪｉａｎｐｉｎｇ（余怀之）（冯德伸）（刘建平）（ＧｅｎｅｒａｌＲｅｓｅａｒｃｈＩｎｓｔｉｔｕ...
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Low Temperature Growth of GaAs on Si byIon Beam Cluster Technique |
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| Yu Huaizhi,Feng Deshen,Liu Jianping.Low Temperature Growth of GaAs on Si byIon Beam Cluster Technique[J].Rare Metals,1996(2). |
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| Authors: | Yu Huaizhi Feng Deshen Liu Jianping |
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| Abstract: | Ion cluster beam (ICB) technique has many advantages in depositing thin film. In present study somecharacters of epitaxial layer of GaAs on Si by ICB have been investigated. These include: comparison of crys-talline quality between ICB deposited GaAs and vacuum deposited GaAs, and to reveal defects by etching onGaAs-Si interface. The experimental results are finally discussed. |
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| Keywords: | Epitaxy Cluster Deposition |
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