| 双靶反应磁控共溅射制备Al掺杂ZnO薄膜及其光电性能 |
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| 引用本文： | 刘丹,李合琴,武大伟,刘涛.双靶反应磁控共溅射制备Al掺杂ZnO薄膜及其光电性能[J].真空与低温,2011(4):230-234. |
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| 作者姓名： | 刘丹 李合琴 武大伟 刘涛 |
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| 作者单位： | 合肥工业大学材料科学与工程学院; |
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| 基金项目： | 国家重点基础研究发展规划项目(2008CB717802); 安徽省自然科学基金(090414182,11040606M63); 安徽省高校自然科学基金(KJ2009A091) |
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| 摘 要： | 采用双靶反应磁控共溅射法在Si（100）和载玻片衬底上制备了Al掺杂ZnO（ZAO）薄膜,利用X射线衍射仪（XRD）、原子力显微镜（AFM）、荧光分光光度计、紫外可见光分光光度计,四探针测试仪等手段对薄膜进行表征,研究了Al掺杂对ZnO薄膜结构和光电性能的影响。结果显示,Al掺杂未改变ZnO的晶体结构,ZAO薄膜沿（002）晶面生长,具有单一的紫光发射峰,在可见光区透过率大于80%,当Zn靶和Al靶溅射功率分别为100 W和20W时,ZAO薄膜的电阻率为8.85×10-4W.cm,表明利用双靶反应磁控共溅射法制备的ZAO薄膜具有较好的光电性能。
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| 关 键 词： | ZAO薄膜 反应共溅射 光电性质 |
PREPARATION AND PHOTOELECTRIC PROPERTY OF Al DOPED ZnO THIN FILMS BY DUAL TARGET REACTIVE MAGNETRON SPUTTERING |
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| LIU Dan,LI He-qin,WU Da-wei,LIU Tao.PREPARATION AND PHOTOELECTRIC PROPERTY OF Al DOPED ZnO THIN FILMS BY DUAL TARGET REACTIVE MAGNETRON SPUTTERING[J].Vacuum and Cryogenics,2011(4):230-234. |
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| Authors: | LIU Dan LI He-qin WU Da-wei LIU Tao |
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| Affiliation: | LIU Dan,LI He-qin,WU Da-wei,LIU Tao(School of Materials Science and Engineering,Hefei University of Technology,Hefei 230009,China) |
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| Abstract: | Al-doped ZAO thin films were deposited on Si(100) and glass substrates by dual target reactive magnetron sputtering.The characters and the effect of Al doping on crystal structure and photoelectric properties of ZnO thin films were investigated by X-ray diffraction(XRD),atomic force microscope(AFM),fluorescence photometer,ultraviolet spectrophotometer and four-point probe sheet resistance measurement.The results show that the structure of Al-doped ZAO thin film is similar to that of ZnO thin film and ZAO th... |
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| Keywords: | ZAO thin film reactive magnetron co-sputtering photoelectric property |
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