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| InGaN绿光LED中p型GaN层的优化设计 | |
| 引用本文： | 郝锐,,马学进,马昆旺,周仕忠,李国强.InGaN绿光LED中p型GaN层的优化设计[J].半导体光电,2013,34(1):20-24. |
| 作者姓名： | 郝锐 马学进 马昆旺 周仕忠 李国强 |
| 作者单位： | 1. 华南理工大学发光材料与器件国家重点实验室,广州510640;江门市奥伦德光电有限公司,江门529000 2. 江门市奥伦德光电有限公司,江门,529000 3. 华南理工大学发光材料与器件国家重点实验室,广州,510640 |
| 基金项目： | 国家自然科学基金项目(51002052);广东省重大科技专项项目(2011A080801018);广东省战略新兴产业LED专项资金项目(2011A0813010101) |
| 摘 要： | InGaN绿光LED的量子阱结构具有较高的In含量,InN与GaN之间较大的晶格失配度使得该结构的稳定性下降.由于量子阱结构生长完成之后的p型GaN的生长温度要远高于量子阱结构生长温度,因此,p型GaN的生长过程对多量子阱质量有重大影响.论文探讨了p型GaN的生长温度与厚度对绿光LED的材料结构及器件性能的影响.研究发现,p-GaN过高的生长温度和过大的厚度都能加剧多量子阱结构中In组分的波动,使得发光峰宽化,同时降低绿光量子阱的发光效率.论文据此提出了优化的p型GaN生长温度与厚度,探讨了量子阱保护层对InGaN绿光LED性能的影响,该结构有利于增强绿光LED发光波长的稳定性. |
| 关 键 词： | InGaN 绿光LED p型GaN 外延生长 X射线衍射 |
| 收稿时间： | 2012/7/24 0:00:00 |
Optimization of p-GaN Layers in InGaN-based Green Light Emitting Diodes |
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| HAO Rui,,MA Xuejin,MA Kunwang,ZHOU Shizhong and LI Guoqiang.Optimization of p-GaN Layers in InGaN-based Green Light Emitting Diodes[J].Semiconductor Optoelectronics,2013,34(1):20-24. | |
| Authors: | HAO Rui MA Xuejin MA Kunwang ZHOU Shizhong and LI Guoqiang |
| Affiliation: | 1.State Key Lab.of Luminescent Materials and Devices,South China University of Technology,Guangzhou 510641,CHN; 2.Jiangmen Orient Opto-Electronics Co.,Ltd.,Jiangmen 529000,CHN;1.State Key Lab.of Luminescent Materials and Devices,South China University of Technology,Guangzhou 510641,CHN; 2.Jiangmen Orient Opto-Electronics Co.,Ltd.,Jiangmen 529000,CHN;1.State Key Lab.of Luminescent Materials and Devices,South China University of Technology,Guangzhou 510641,CHN; 2.Jiangmen Orient Opto-Electronics Co.,Ltd.,Jiangmen 529000,CHN;1.State Key Lab.of Luminescent Materials and Devices,South China University of Technology,Guangzhou 510641,CHN; 2.Jiangmen Orient Opto-Electronics Co.,Ltd.,Jiangmen 529000,CHN;1.State Key Lab.of Luminescent Materials and Devices,South China University of Technology,Guangzhou 510641,CHN; 2.Jiangmen Orient Opto-Electronics Co.,Ltd.,Jiangmen 529000,CHN |
| Abstract: | The high fraction of indium (In) in the multi-quantum wells (MQWs) and the large lattice mismatch between InN and GaN dramatically decrease the stability of InGaN-based green light emitting diodes (LEDs). Because the growth temperature of p-GaN is much higher than that of MQWs, the growth of p-GaN will impact the quality of MQWs greatly. In this work, it is focused on the influence of the growth temperature and the thickness of p-GaN on the performance of green LEDs, and it is revealed that too high growth temperature or thickness will have negative impact on the stability of In fraction in MQWs, which results in the broadening of emission peak and the reduction in luminous efficiency. Accordingly, the optimized growth temperature and thickness are proposed. Furthermore, the influence of MQWs protection layer on green LEDs performance was discussed and it is found that this protection layer is beneficial to the stability of the emission wavelength of green LEDs. |
| Keywords: | InGaN green LED p-GaN epitaxial growth X-ray diffraction |
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