| 调制掺杂AlxGa1-xN/GaN异质结中二维电子气的光致发光 |
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| 引用本文： | 沈波,张荣,郑有炓. 调制掺杂AlxGa1-xN/GaN异质结中二维电子气的光致发光[J]. 功能材料与器件学报, 2000, 6(4): 346-349 |
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| 作者姓名： | 沈波 张荣 郑有炓 |
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| 作者单位： | 南京大学物理系,南京210093;南京大学物理系,南京210093;南京大学物理系,南京210093 |
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| 摘 要： | 研究了调制掺杂ＡｌｘＧａ１－ｘＮ／ＧａＮ异质结中与二维电子气（２ＤＥＧ）有关的光致发光,发现温度４０Ｋ时Ａｌ０．２２Ｇａ０．７８Ｎ／ＧａＮ异质结中２ＤＥＧ与光激发空穴复合形成的发光峰位于３．４４８ｅＶ,低于ＧａＮ自由激子峰４５ｍｅＶ。由于ＡｌｘＧａ１－ｘＮ／ＧａＮ界面极强的压电极化场的影响,光激发空穴很快扩散进ＧａＮ平带区,导致２ＤＥＧ与光激发空穴复合几率很低,在ＧａＮ中接近Ａｌ０．２２Ｇａ０．７
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| 关 键 词： | GaN 二维电子气(2DEG) 异质结 光致发光 |
Photoluminescence related to the two dimensional electron gas in modulation-doped AlxGa1-xN/GaN heterostructures |
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| SHEN Bo,ZHANG Rong,ZHENG You-dou. Photoluminescence related to the two dimensional electron gas in modulation-doped AlxGa1-xN/GaN heterostructures[J]. Journal of Functional Materials and Devices, 2000, 6(4): 346-349 |
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| Authors: | SHEN Bo ZHANG Rong ZHENG You-dou |
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| Abstract: | Photoluminescence (PL) of modulation-doped Al0.22Ga0.78N/GaN heterostructures was investigated. The PL peak related to recombination between the two-dimensional electron gases (2DEG) and photoexcited holes is located at 3.448 eV at 40 K, which is 45 meV below the free exciton (FE) emission in GaN. The intensity of the 2DEG PL peak is enhanced significantly by incorporating a thin Al0.12Ga0.88N layer into the GaN layer near the heterointerface to suppress the diffusion of photoexcited holes. |
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| Keywords: | GaN 2DEG Photoluminescence Heterostructure |
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