Development of highly efficient mosaic photodetectors based on arrays of photosensitive elements |
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Authors: | A R Novoselov |
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Affiliation: | (1) North Carolina State University, Power Semiconductor Research Center, Raleigh, 27695, NC; |
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Abstract: | This paper substantiates laser scribing conditions for fabricating mosaic photodetectors based on molecular beam epitaxial
(MBE) p-type HgCdTe films on GaAs substrates without loss of image information at a spacing of photosensitive elements (10 μm in
diameter) of not less than 46 μm. A scribing technique for linear array photosensitive elements of dimension 4×288 p-n junctions spaced at 56 μm intervals is described in which a two-level depth groove is formed in several passes. In the region
of p-n junctions, the groove is formed by radiation with an average power of 1.4 mW, and outside this region, it is formed by radiation
with an average power of 2 mW. The groove has varying depth: outside the p-n junction region, the grove is 120 μm deep and 22 μm wide, and in the junction region, it is 26 μm deep and 18 μm wide. It
is shown that the laser radiation effect does not lead to accelerated degradation of the electrical parameters of the p-n junctions |
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