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MOCVD growth of strained multiple quantum well structure for 1.3 μm InAsP/InP laser diodes |
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| Authors: | Chong-Yi Lee Meng-Chyi Wu Hung-Pin Shiao Tian-Tsorng Shi Wen-Jeng Ho |
| Affiliation: | a Research Institute of Electrical Engineering, Department of Electrical Engineering, National Tsing Hua, University, Hsinchu 300, Taiwan, ROC b Department of Electrical Engineering, Ta Hwa Institute of Technology, Chung-Lin, Hsinchu, Taiwan, ROC c Photonic Technology Research, Telecommunication Laboratories, Ministry of Transportation and Communications, Yang-Mei 326, Taiwan, ROC |
| Abstract: | In this article, we describe the growth and characterization for 1.3 μm InAsP/InP strained multiple quantum well (SMQW) laser diodes (LDs) with separate confinement heterostructure grown at 580°C by metalorganic chemical vapor deposition. The grown strained single quantum well (SSQW) stack and strained multiple quantum well (SMQW) structures are characterized using double-crystal X-ray diffraction and photoluminescence (PL) to confirm the structural and optical qualities for practical device applications. The InAsP/InP SSQW stack grown at 580°C appears to be extremely abrupt, uniform, free of misfit dislocations and narrow PL half width. Although the InAsP/InP SMQWs grown at 580°C maintain its structural integrity throughout the deposition sequence, the slightly broader PL half width for InAsP/InP SMQW structure is attributed to the dislocations resulted from a large net strain. Laser emission can be achieved by using the InAsP/InP SMQWs and the lasing wavelength is in a good agreement with our designed structure. The experimental data of broad-area and ridge waveguide LDs are described in detail. |
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