Parameters of metal one-electron transistors based on various materials

Limiting parameters (operating temperature and cutoff frequency) and current-voltage characteristics of one-electron transistors based on various metal compounds (Al/AlO_x/Al, Al/SiO₂/Al, Au/Al₂O₃/Au, Nb/Al₂O₃/Nb, Ti/TiO_x/Ti, Cr/Cr₂O₃/Cr, and Nb/NbO_x/Nb) were theoretically studied. Practical recommendations for the choice of materials and structure sizes were formulated. The characteristics were calculated using a SET-NANODEV software package based on the effect of one-electron tunneling and developed for structure simulation according to a technique for estimating the limiting parameters and a two-dimensional numerical model of the metal one-electron transistor.