| Ga阶梯分布改善快速晶闸管耐压特性 |
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| 引用本文： | 裴素华,赵善麒.Ga阶梯分布改善快速晶闸管耐压特性[J].半导体杂志,1998,23(4):30-33,44. |
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| 作者姓名： | 裴素华 赵善麒 |
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| 作者单位： | [1]山东师范大学半导体研究所 [2]北京电力电子新技术研究开发中心 |
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| 摘 要： | 利用开管扩Ｇａ系统，分段控制掺杂量，使杂质Ｇａ在硅中形成阶梯形分布，用于快速晶曾管的研制，理论分析与测试结果表明，器件阻断耐压值比原高分布提高２００Ｖ左右，且通态特性和动态特性保持优良。实验证明，Ｇａ的阶梯分布是的晶闸管后条新途径。
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| 关 键 词： | 阶梯分布 耐压特性 晶闸管 掺杂 |
The Improvement of the Voltage Properties of High Speed Thyristors By Forming Steps Distribution of Gallium |
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| Authors: | Pei Suhua Zhao Shanqi Xue Chengshan and Jiang Yuqing |
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| Affiliation: | Pei Suhua 1,Zhao Shanqi 2,Xue Chengshan 1 and Jiang Yuqing 1 |
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| Abstract: | The gallium dopant with a step distribution in silicon has been formed using the technology of open tube Ga diffusion and controlling the quantity of the impurity in different depth. This processing has been utilized in fabrication of high speed thyristors to improve the blocking voltage. In this study we demonstrate that the step distribution of Ge dopant formed using open tube Ga diffusion is a new optimized process to fabricate high voltage and high speed thyristors. |
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| Keywords: | Steps distribution Voltage properties Thyristor |
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