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Emission Characteristics of PVK Doped TbY(o-MBA)6(phen)2 Systems
引用本文:张元元,邓振波,梁春军,陈宝妹,肖静,徐登辉,王瑞芬.Emission Characteristics of PVK Doped TbY(o-MBA)6(phen)2 Systems[J].中国稀土学报(英文版),2006,24(2):150-154.
作者姓名:张元元  邓振波  梁春军  陈宝妹  肖静  徐登辉  王瑞芬
作者单位:Institute of Optoelectronic Technology Key Laboratory of Information Storage and Display Beijing Jiaotong University Beijing 100044 China,Institute of Optoelectronic Technology Key Laboratory of Information Storage and Display Beijing Jiaotong University Beijing 100044 China,Institute of Optoelectronic Technology Key Laboratory of Information Storage and Display Beijing Jiaotong University Beijing 100044 China,Institute of Optoelectronic Technology Key Laboratory of Information Storage and Display Beijing Jiaotong University Beijing 100044 China,Institute of Optoelectronic Technology Key Laboratory of Information Storage and Display Beijing Jiaotong University Beijing 100044 China,Institute of Optoelectronic Technology Key Laboratory of Information Storage and Display Beijing Jiaotong University Beijing 100044 China,Department of Chemistry Hebei Normal University Shijiazhuang 050091 China
基金项目:Project supported by the National Natural Science Fouadation of China (90201004), Beijing Science & Technology Foundation (H030430020410), and the Natural Science Foundation of Ilebei (203148)
摘    要:Since the pioneering work of Tang and VanSlykeon organic light emitting diodes(OLEDs)in1987,OLEDs have been particularlyinterestedin because oftheir potential applications in next-generationflat-pan-el displays and large-area flexible displays1~3].Rareearth complex materials have been widely used incathodoluminescent display phosphor screens,lasersand lamps because their photoluminescence PL ex-hibits high quantumefficiencies and very sharp spec-tral bands.Inthe1990s,Kido et al4~6]first…

关 键 词:铽复合物  稀土  掺杂  发光性能  电致发光  激子
文章编号:1002-0721(2006)02-0150-05
收稿时间:2005-06-16
修稿时间:2005-08-26

Emission Characteristics of PVK Doped TbY(o-MBA)6(phen)2 Systems
Yuanyuan , Zhenbo Deng, Chunjun Liang, Baomei Chen, Jing Xiao, Denghui Xu,Ruifen Wang.Emission Characteristics of PVK Doped TbY(o-MBA)6(phen)2 Systems[J].Journal of Rare Earths,2006,24(2):150-154.
Authors:Yuanyuan  Zhenbo Deng  Chunjun Liang  Baomei Chen  Jing Xiao  Denghui Xu  Ruifen Wang
Affiliation:aInstitute of Optoelectronic Technology, Key Laboratory of Information Storage and Display, Beijing Jiaotong University, Beijing 100044, China;bDepartment of Chemistry, Hebei Normal University, Shijiazhuang 050091, China
Abstract:A rare earth complex TbY (o-MBA)6(phen)2 was synthesized, which was first used as an emitting material in electroluminescence.By doping it into the conjugated polymer PVK, single-layer and double-layer devices were fabricated with structures: device A: ITO/PVK: TbY (o-MBA)6(phen)2/LiF/Al;B: ITO/PVK: TbY (o-MBA)6(phen)2/AlQ/LiF/Al;C: ITO/PVK: TbY (o-MBA)6(phen)2/BCP/AlQ/LiF/Al.The characteristics of these devices were investigated.For single-layer and double-layer devices, the emission of PVK was completely restrained, and only the green emission from Tb3+ was observed in electroluminescence.The above mentioned observation is attributed to the different mechanism of electroluminescence and photoluminescence.In photoluminescence process, the energy of Tb complex may come from PVK through Frster energy transfer process, while in electroluminescence process direct sequential charge trapping appeares to be the main operating mechanism.From the optimized device B, brightly green emission can be obtained, and the highest EL brightness of the device reaches 213 cd·m-2 at 14 V.
Keywords:terbium complex  electroluminescence (EL)  exciton  rare earths
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