CW laser annealing of boron implanted polycrystalline silicon

The electrical characteristics have been measured on CW laser annealed boron implanted polycrystalline silicon layers. It is shown, that a resistivity can be obtained, which is only about double that of a single crystalline layer doped to the same level. By appropriate choice of doping and laser annealing parameters, a temperature coefficient close to zero can be achieved. It is also shown that laser irradiation can be used to trim a furnace annealed polysilicon resistor to a desired resistance value.