Schottky diode design for low-voltage rectification |
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| Authors: | Takashi Kawakami Yoshihito Amemiya Yoshihiko Mizushima |
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| Affiliation: | Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation, Midoricho, Musashino-shi, Tokyo 1980, Japan;Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation, Ono, Atsugi-shi, Kanagawa 243-01, Japan;Hamamatsu Photonics Co. Ltd., Ichinomachi, Hamamatsu-shi, Shizuoka 435, Japan |
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| Abstract: | Barrier height and impurity concentration of a power Schottky diode are optimized for maximum rectifying efficiency in DC-DC converter operation. An optimum barrier-height-impurity-concentration combination is calculated for a given output voltage and diode temperature. For a 1.5 – 2 V output converter, the optimum combination is found to be 17 kT/q and 1.5 × 1016 cm?3. Based on the theoretical prediction, titanium- and hafnium-barrier diodes were fabricated as suitable diodes for low-voltage converters and compared with conventionally used molybdenum-barrier diodes. In the experiment on a 2-V output DC-DC converter, the new diodes show higher efficiency than molybdenum diodes at up to 85°C. They are fit for use in encapsulated converters because of their smaller heat generation. |
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