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| PECVD法低温淀积SiC_x薄膜的防水汽扩散性能研究 | |
| 引用本文： | 姜利军,陈翔,王旭洪,徐立强. PECVD法低温淀积SiC_x薄膜的防水汽扩散性能研究[J]. 功能材料, 2000, 0(Z1) |
| 作者姓名： | 姜利军 陈翔 王旭洪 徐立强 |
| 作者单位： | 中国科学院上海冶金研究所中德联合电子器件封装实验室!上海200050 |
| 摘 要： | 外界水汽和离子的扩散对集成电路和传感器等器件的性能及使用寿命有很大影响 ,利用无机钝化材料阻挡水汽和离子的扩散是常用的提高器件寿命和稳定性的方法。本文采用PECVD方法在较低的衬底温度条件下淀积碳化硅薄膜 ,利用各种方法研究了碳化硅薄膜的防潮性能。实验证明 ,碳化硅薄膜是一种良好的水汽扩散阻挡材料 ,其防潮能力达到甚至超过了集成电路生产中常用的氮化硅薄膜。并且 ,低温碳化硅薄膜具有非常好的化学稳定性和抗刻蚀能力 ,在各种微加工工艺中有广泛的应用前景。 |
| 关 键 词： | 碳化硅薄膜 PECVD 防水汽扩散 |
Moisture-Resistance Properties of SiC_x Thin Films Deposited by PECVD at Low Temperature |
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| JIANG Lijun,CHEN Xiang,WANG Xuhong,XU Liqiang. Moisture-Resistance Properties of SiC_x Thin Films Deposited by PECVD at Low Temperature[J]. Journal of Functional Materials, 2000, 0(Z1) | |
| Authors: | JIANG Lijun CHEN Xiang WANG Xuhong XU Liqiang |
| Abstract: | SiC x thin films were deposited via Plasma-Enhanced Chemical Vapor Deposition (PECVD) process at low substrate temperature.The properties of the film were investigated with emphasis on moisture resistance.It was proved that the capability of SiC x film to resist the penetration of moisture is as good as that of SiN x film,which is commonly used as passivation layer in integrated circuits.Besides,SiC x thin film is chemical inert and has good etch resistance,which can be widely used in micro-fabrication technology. |
| Keywords: | silicon carbide thin film PECVD moisture resistance |
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