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| Effect of Substrate Nitridation on Properties of Thick GaN Film Grown by Hydride Vapour Phase Epitaxy | |
| 引用本文： | YEHao-hua YUGuang-hui LEIBen-lian QIMing LIAi-zhen. Effect of Substrate Nitridation on Properties of Thick GaN Film Grown by Hydride Vapour Phase Epitaxy[J]. 半导体光子学与技术, 2005, 11(1): 28-31 |
| 作者姓名： | YEHao-hua YUGuang-hui LEIBen-lian QIMing LIAi-zhen |
| 作者单位： | [1]StateKeyLab.ofFunction.Mater.forInform.,ShanghaiInstituteofMicrosyst.andInform.Technol.,CASs,Shanghai200050,CHN [2]StateKeyLab.ofFunction.Mater.forInform.,ShanghaiInstituteofMicrosyst.andInform.Technol.,CASs,Shanghai200050,CHN／／GraduateSchooloftheChineseAcademyofSciences,Beijing100039,CHN |
| 基金项目： | 国家高技术研究发展计划(863计划)，Sino-French Cooperation Project |
| 摘 要： | Thick GaN films were grown on the sapphire substrate by hydride vapour phase epitaxy. The properties of GaN films were found to be significantly influenced by the duration of exposing the sapphire substrate to ammonia prior to the GaN growth initiation. The crystalline quality of GaN films revealed by high resolution X-ray diffraction were strongly dependent on the nitridation time, which determined substrate surface topography. The different nitridation schemes strongly affected the morphology of GaN overlayers resulting in the blue shift of the main excitonic peak in photoluminescence spectra at room temperature. |
| 关 键 词： | GaN薄膜 氮化衬底 生长方法 氢化物气相外延 |
| 收稿时间： | 2004-07-14 |
Effect of Substrate Nitridation on Properties of Thick GaN Film Grown by Hydride Vapour Phase Epitaxy |
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| YE Hao-hua,YU Guang-hui,LEI Ben-liang,QI Ming,LI Ai-zhen. Effect of Substrate Nitridation on Properties of Thick GaN Film Grown by Hydride Vapour Phase Epitaxy[J]. Semiconductor Photonics and Technology, 2005, 11(1): 28-31 | |
| Authors: | YE Hao-hua YU Guang-hui LEI Ben-liang QI Ming LI Ai-zhen |
| Abstract: | Thick GaN films were grown on the sapphire substrate by hydride vapour phase epitaxy. The properties of GaN films were found to be significantly influenced by the duration of exposing the sapphire substrate to ammonia prior to the GaN growth initiation. The crystalline quality of GaN films revealed by high resolution X-ray diffraction were strongly dependent on the nitridation time, which determined substrate surface topography. The different nitridation schemes strongly affected the morphology of GaN overlayers resulting in the blue shift of the main excitonic peak in photoluminescence spectra at room temperature. |
| Keywords: | Substrate nitridation GaN Hydride vapour phase epitaxy |
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