激活温度对C—H,C—O和C—H—O体系低压金刚石生长条件的影响

激活温度和衬底温度是低压人造金刚石制备过程中的两个重要的温度参数，激活温度决定着制备过程中一些重要激活粒子如超平衡氢原子和超平衡氧原子等浓度，而衬底温度对能否 生长金刚石也有重要作用。采用合理的理论计算可以预测温度对金刚石生长条件的影响。本研究采用非平衡力学硝模型计算了Ｃ－Ｈ、Ｃ－Ｏ和Ｃ－Ｈ－Ｏ体系不同激活温度下的金刚石生长相图，研究了激活温度和衬底温度对金刚石生长区的影响规律。本研究结果将对金刚

Effects of Activation Temperature on Diamond Growth in C-H,C-O and C-H-O Systems under Low Temperature

Activation temperature and substrate temperature are two key parameters for diamond growth in the vapor phase under low pressure. Activation temperature determines the concentrations of activation particles such as super-equilibrium atomic hydrogen (SAH) and super-equilibrium atomic oxygen (SAO) etc. in reaction syStems, and substrate temperature also plays an very important role in reaction processes concerning with the success or failure of diamond growth. Theoretical calculations may predict the effect of temperature on diamond growth conditions. In this paper, according to our non-equilibrium thermodynamic coupling model, the phase diagrams for diamond growth in C-H,C-O and C-H-O system are calculated under different activation temperatures. Based on these phase diagrams, the effects os activation temperature and substrate temperature on diamond growth region were studied. These results can direct the selection of activation temperature and substrate temperature during diamond growth in the vapor phase under low pressure.