Highly reliable 200 mW AlGaAs laser diode with fundamental transverse mode |
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| Authors: | Tajiri A Minakuchi K Komeda K Bessho Y Inoue Y Yodoshi K Yamaguchi T |
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| Affiliation: | Semicond. Res. Centre, Sanyo Electr. Co. Ltd., Osaka, Japan; |
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| Abstract: | A highly reliable 200 mW AlGaAs laser diode with a fundamental transverse mode has been developed, by optimising its structure with a 0.8 mu m thick p-cladding layer, a 1200 mu m long cavity length, and a front facet coating with a low reflectivity of 2%. The maximum output power was 500 mW, and stable fundamental transverse mode operation was obtained up to 350 mW. Stable operation under 200 mW and 50 degrees C was confirmed for more than 1200 h. Optical feedback noise was below 3*10/sup -14/ Hz/sup -1/.<> |
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