Separately bounded InGaAsP high-power laser heterostructures obtained by VPE of organometallic compounds |
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| Authors: | E. G. Golikova V. A. Gorbylev N. Yu. Davidyuk V. A. Kureshov A. Yu. Leshko A. V. Lyutetskii N. A. Pikhtin Yu. A. Ryaboshtan V. A. Simakov I. S. Tarasov N. V. Fetisova |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia |
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| Abstract: | InGaAsP/InP laser heterostructures with two stressed quantum wells operating in the wavelength range 1.3–1.55 μm were obtained by VPE of organometallic compounds. An optical emission power of 2.4 W was reached for the laser diodes with 100-μm wide strips operated in the continuous lasing mode at 20°C. A minimum threshold current density was 260 A/cm2. A differential quantum efficiency ηd= 40% was obtained with a 1.9-mm-long Fabry-Perot resonator. The internal optical losses of the heterostructures are reduced to 2.6–4.2 cm−1. |
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